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Webinar: AFM Characterization of 2D Materials

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  • AR Presents the Webinar: AFM Characterization of 2D Materials

    Dr. Andras Kis of EPFL, Institute of Electrical Engineering, and Keith Jones, Asylum Research's nanoelectrical characterization specialist are your hosts. They discuss the integral role of AFM in 2D materials research, and present the tools and techniques used to successfully characterize a variety of 2D materials used for device manufacturing, energy storage and optoelectronics. Learn about AFM modes for mapping physical properties and see how these modes are used to characterize local electrical, mechanical and functional responses. Further, we discuss how AFM can now be used to accurately determine the thickness of single or multiple layers of a 2D material. This will challenge a common misconception that AFM cannot be used to precisely measure the thickness of 2D materials.
    Register for Webinar
    Register Now - http://www.oxford-instruments.com/bu...rials#register
    Included, results on the following studies:

    • Molybdenum disulfide (MoS2) and graphene
    • Measurements of mechanical properties
    • Kelvin probe imaging (KPFM) of operating transistors
    • Electrical characterization


    Detailed discussions of these modes:

    • KPFM
    • Piezoresponse force microscopy (PFM)
    • Conductive AFM
    • Scanning microwave impedance imaging (sMIM)



    Mapping the local electrical properties across grain boundaries in large-area monolayer MoS2. (a) Local potential map (upper panel) and line scan across the red line (lower panel) showing the potential drop over the conductive channel of a biased field-effect transistor based on two merged MoS2 single crystals with the same lattice orientation. In this case, no grain boundary is expected. The smooth potential drop indicates the absence of abrupt changes of potential that would indicate the presence of an electrically resistive grain boundary. (b) Local potential map and line scan over two merged triangles with a 60 misorientation angle. This configuration is expected to result in a twin grain boundary. Its presence does not introduce an extra potential drop, indicating that it does not degrade the electrical conductivity of the material. (c) Local potential map and line scan over two merged triangles with a 30 misorientation angle. The presence of the grain boundary does not introduce an extra potential drop in the channel. Insets in line scan plots indicate relative orientations of MoS2 single crystals.

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